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The STGD5NB120SZ from ST uses the latest high voltage technology based on the innovative PowerMESH strip layout to produce an advanced IGBT that gives outstanding performance.
This IGBT has been optimised to achieve a minimum on-voltage drop for low frequency applications (<1kHz). The device is particularly suitable for pre-heating in electronic lamp ballast, as well as for inrush current limitation and lighting dimmers.
Channel Type | N-Channel |
---|---|
Collector Current (Ic) | 5A |
Collector-Emitter Breakdown Voltage | 1200V |
Collector-Emitter Saturation Voltage | 1.3V |
Fall Time | 1.13ns |
Gate Threshold Voltage | 5V |
Height | 7mm |
Length | 6.6mm |
Operating Temperature Range | -55 to +150°C |
Package/Case | IPAK |
Power Dissipation (Pd) | 55W |
Rise Time | 170ns |
Width | 2.4mm |