A complementary silicon Darlington transistor with an epitaxial-base and monolithic configuration. Typical applications includes linear and switching industrial equipment.
NPN Polarity
100V Collector Emitter voltage
100V Collector-Base voltage
2.5V Emitter-Base voltage
10A Collector current
70W Power
750 DC Current gain
5mA Collector cut-off current
2.5V Collector-Emitter saturation voltage
TO-220 Case
Type
NPN
Collector Current (Ic)
10A
Collector-Base Voltage (Vcb)
100V
DC Current Gain (hfe)
750
Emitter-Base Voltage (Veb)
5V
Package/Case
TO-220
Power Dissipation (Pd)
70W
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