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Re-reeling orders placed after 16:30 will be processed the next working day.
This 1.3W P-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP package that is machine-insertable and can be stacked in multiple combinations on standard 0.1in pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
Note: Previously manufactured under the International Rectifier name.
To find out more about our range of Vishay resistors, diodes, capacitors and switches, please visit our Vishay brand page.
Channel Type | P-Channel |
---|---|
Drain Current | 1.6A |
Drain-Source Breakdown Voltage | 60V |
Drain-Source On-Resistance | 0.28Ω |
Gate Source Voltage | 20V |
Package/Case | HEXDIP |
Power Dissipation | 1.3W |
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