Enhancement mode vertical DMOS FET, P-Channel type, 100V drain-source breakdown voltage, 8R drain-source on-resistance, 230mA drain current, 20V gate source voltage, 7ns turn-on time, 12ns turn-off time, 700mW power, TO-92 case, 159mg weight.
| Channel Type |
P-Channel |
| Drain Current |
0.23A |
| Drain-Source Breakdown Voltage |
100V |
| Drain-Source On-Resistance |
8Ω |
| Gate Source Voltage |
20V |
| Package/Case |
TO-92 |
| Power Dissipation |
0.7W |
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- ROHS : Compliant
- ROHS : Exempt
- ROHS : Non Compliant
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