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Re-reeling orders placed after 16:30 will be processed the next working day.
A high power N Channel MOSFET with a VDS of 200V, RDS(ON) of 0.8Ω, and a Qg of 14nC. The MOSFET has a rugged, cost effective package and is suitable for a wide range of applications.
To find out more about our range of Vishay resistors, diodes, capacitors and switches, please visit our Vishay brand page.
Channel Type | N-Channel |
---|---|
Drain Current | 5.2A |
Drain-Source Breakdown Voltage | 200V |
Drain-Source On-Resistance | 0.8Ω |
Gate Source Voltage | 20V |
Package/Case | TO-220 |
Power Dissipation | 50W |
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