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This 1.3W N-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP package that is machine-insertable and can be stacked in multiple combinations on standard 0.1in pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
To find out more about our range of Vishay resistors, diodes, capacitors and switches, please visit our Vishay brand page.
Channel Type | N-Channel |
---|---|
Drain Current | 1.3A |
Drain-Source Breakdown Voltage | 100V |
Drain-Source On-Resistance | 0.27Ω |
Gate Source Voltage | 20V |
Package/Case | HEXDIP |
Power Dissipation | 1.3W |