Low power, small signal transistor with silicon planar epitaxial construction, designed for general purpose switching and amplifier applications.
- NPN polarity
- Collector emitter breakdown voltage 40V
- Collector base breakdown voltage 60V
- Collector current 200mA
- Power 625mW
- Transition frequency 300MHz
- TO-92 case
| Type |
2N4401 |
| Case |
TO-92 |
| Collector Current Cont. |
0.6A |
| Collector-Emitter Voltage |
40V |
| DC Current Gain (max.) |
300 |
| Operating Temperature |
-55 to +150°C |
| Power Dissipation |
0.625W |
| Transition Frequency |
250MHz |
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- ROHS : Compliant
- ROHS : Exempt
- ROHS : Non Compliant
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